C2655 Transistor: Datasheet, Pinout, Equivalent, Uses[FAQ]

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Published: 14 April 2022 | Last Updated: 14 April 2022

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2SC2655-O,F(J

2SC2655-O,F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Purchase Guide

TRANS NPN 2A 50V TO226-3

C2655 is a TO-92L or TO-92MOD package BJT transistor. This article mainly covers its datasheet, pinout, equivalent, uses and more details about C2655.

C2655 Pinout

C2655 Pinout.jpg

C2655 Pinout

C2655 CAD Model

Symbol

2SC2655 Symbol.jpg

2SC2655 Symbol

Footprint

2SC2655 Footprint.jpg

2SC2655 Footprint

3D Model

2SC2655 3D Model.jpg

2SC2655 3D Model

C2655 Description

2SC2655 is a TO-92L or TO-92MOD packaging  BJT  transistor with many intriguing features in a tiny package that makes it perfect for use in a wide range of applications. It is an NPN transistor with a maximum collector current of 2A, allowing it to drive a wide range of electrical components that require 2A current.

However, the transistor can also be used as an audio amplifier, with a maximum audio output of 900mW and a maximum DC current gain of 70 to 240. However, some manufacturers provide these transistors in two different gain categories, which may be determined by glancing at the alphabet on the transistor below the component number. If the alphabet is "O," the gain is 70-120, and if the alphabet is "Y," the gain is 120-140.

Moreover, the transition frequency of the transistor is 100MHz due to which it can also be used in  RF  circuits under 100MHz.


C2655 Feature

• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) 

• High collector power dissipation: PC = 900 mW 

• High-speed switching: tstg = 1.0 μs (typ.)

C2655 Application

  • Switching loads under 2000mA

  • Motor Controllers

  • Audio Amplifiers

  • Audio Amplifier Stages

  • AM & FM Radio & Transmitters


C2655 Equivalent

The equivalent for C2655:

2SC3328, STX715, KTC3209, MJE182 (TO-126 Package), 2SA1162 (TO-126 Package).


C2655 PNP Complementary

PNP Complementary of 2SC2655 is 2SA1020.

C2655 Uses

C2655 can be utilized in a wide range of general-purpose switching and amplification applications. When used as a switch, it may drive a variety of loads in 2A circuits. Loads can include high-power LEDs, relays, integrated circuits (ICs), and a variety of other electronic components.

It can offer 900mW of maximum audio amplification when used as an audio amplifier, allowing it to be utilized in audio amplifier stages or to drive a small 1-watt loudspeaker directly from a small audio input. It can be utilized as an amplifier in a variety of bell/chimes, mp3 player audio amplification, and a variety of other electrical applications that require audio amplification of 900mW. It can also be used for AM and FM broadcasting and receiving.

C2655 Safe Operating Guide

Always utilize the C2655 transistor at least 20% below its maximum ratings for long-term performance. Because the transistor's maximum collector current is 2A, do not drive a load greater than 1.6A for safety. The maximum collector-emitter voltage is 50V; for safety, no-load greater than 40V should be driven. The operation and storage temperatures of the transistor should be between -55 and +150 ℃.

C2655 Package

C2655 Package.jpg

C2655 Package

C2655 Manufacturer

Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

Specifications

Toshiba Semiconductor and Storage 2SC2655-O,F(J technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SC2655-O,F(J.
  • Type
    Parameter
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-226-3, TO-92-3 Long Body
  • Supplier Device Package

    The parameter "Supplier Device Package" in electronic components refers to the physical packaging or housing of the component as provided by the supplier. It specifies the form factor, dimensions, and layout of the component, which are crucial for compatibility and integration into electronic circuits and systems. The supplier device package information typically includes details such as the package type (e.g., DIP, SOP, QFN), number of pins, pitch, and overall size, allowing engineers and designers to select the appropriate component for their specific application requirements. Understanding the supplier device package is essential for proper component selection, placement, and soldering during the manufacturing process to ensure optimal performance and reliability of the electronic system.

    TO-92MOD
  • Current-Collector (Ic) (Max)
    2A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Power - Max

    Power - Max is a parameter that specifies the maximum amount of power that an electronic component can handle without being damaged. It is typically measured in watts and indicates the upper limit of power that can be safely supplied to the component. Exceeding the maximum power rating can lead to overheating, malfunction, or permanent damage to the component. It is important to consider the power-max rating when designing circuits or systems to ensure proper operation and longevity of the electronic components.

    900mW
  • Transistor Type

    Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce

    The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.

    70 @ 500mA 2V
  • Current - Collector Cutoff (Max)

    The parameter "Current - Collector Cutoff (Max)" refers to the maximum current at which a transistor or other electronic component will cease to conduct current between the collector and emitter terminals. This parameter is important in determining the maximum current that can flow through the component when it is in the cutoff state. Exceeding this maximum cutoff current can lead to malfunction or damage of the component. It is typically specified in the component's datasheet and is crucial for proper circuit design and operation.

    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic

    The parameter "Vce Saturation (Max) @ Ib, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is specified at a certain base current (Ib) and collector current (Ic) levels. It indicates the minimum voltage required to keep the transistor fully conducting in saturation mode, ensuring that the transistor operates efficiently and does not enter the cutoff region. Designers use this parameter to ensure proper transistor operation and to prevent overheating or damage to the component.

    500mV @ 50mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)

    Voltage - Collector Emitter Breakdown (Max) is a parameter that specifies the maximum voltage that can be applied between the collector and emitter terminals of a transistor or other semiconductor device before it breaks down and allows excessive current to flow. This parameter is crucial for ensuring the safe and reliable operation of the component within its specified limits. Exceeding the maximum breakdown voltage can lead to permanent damage or failure of the device. Designers and engineers must carefully consider this parameter when selecting components for their circuits to prevent potential issues and ensure proper functionality.

    50V
  • Frequency - Transition

    The parameter "Frequency - Transition" in electronic components refers to the maximum frequency at which a signal transition can occur within the component. It is a crucial specification for digital circuits as it determines the speed at which data can be processed and transmitted. A higher frequency transition allows for faster operation and better performance of the electronic component. It is typically measured in hertz (Hz) or megahertz (MHz) and is specified by the manufacturer to ensure proper functioning of the component within a given frequency range.

    100MHz
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Datasheet PDF

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage 2SC2655-O,F(J.
Frequently Asked Questions

What does the 2SC2655 transistor require?

2A current.

What is the maximum audio output of the 2SC2655 transistor?

900mW.

What is the gain of the 2SC2655 transistor if the alphabet is "O"?

120-140.

What is the transition frequency of the C2655?

100MHz.

What is 2SC2655?

A TO-92L or TO-92MOD packaging BJT transistor.
2SC2655-O,F(J

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