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IRF3710 N-Channel Power MOSFET: Equivalent, Datasheet, Pinout

Q: What is irf3710 and how does it work?

It is a fully avalanche rated device with a gate-source voltage of around 20V. I suggest you read this entire post till the end as I’ll detail the complete Introduction to IRF3710 covering datasheet, pinout, features, and applications. Let’s jump right in. The IRF3710 is an N-channel MOSFET mainly employed for fast switching purposes.

Q: What is irf3710 series RoHS semiconductor?

RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power products-Channel Power MOSFET (57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field-effect transistors. They are designed, tested and guaranteed to withstand the level of energy in a breakdown avalanche mode of operation.

Q: Where is the gate pin located on an irf3710 MOSFET?

The gate pin is located between the source and the drain pin. The voltage on the gate pin is used to control the channel width. This IRF3710 MOSFET carries low ON resistance, making it a suitable pick for low drop switching applications. The low drop leads to low power loss, hence ensuring greater efficiency.

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Published: 11 January 2022 | Last Updated: 11 January 2022

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datasheet pdf and product details from stock available at Utmel

Purchase Guide

IRF3710 is a 57A 100V N-Channel Power MOSFET. This post will cover its equivalent, pinout, datasheet and more details about IRF3710. Welcome your RFQ!

IRF3710

Catalog

IRF3710 Pinout

IRF3710 Pinout.jpg

IRF3710 Pinout

IRF3710 CAD Model

Symbol

IRF3710 Symbol

Footprint

IRF3710 Footprint.jpg

IRF3710 Footprint

3D Model

IRF3710 3D Model.jpg

IRF3710 3D Model

IRF3710 Description

Advanced processing techniques are used to achieve extraordinarily low on-resistance per silicon area using the IRF3710 57A 100V N-Channel Power MOSFET. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.

IRF3710 Feature

Advanced Process Technology

Ultra-Low On-Resistance

Dynamic DV/DT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

IRF3710 Application

Switch Mode Power Supplies
Power Factor Correction
Electronic Lamp Ballasts

IRF3710 Equivalent

The equivalent for IRF3710:

IRF044
IRF044SMD
IRF054
IRF054SMD
IRF100B201

IRF3710 Test Circuit

The following figure shows the test circuit of IRF3710:

IRF3710-Peak Diode Recovery dv dt Test Circuit.jpg

IRF3710-Peak Diode Recovery DV /DTTest Circuit

IRF3710-For N-channel HEXFET8 power MOSFETs

Specifications

technical specifications, attributes, parameters and parts with similar specifications to .

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IRF3710 Dimensions

The IRF3710 Dimensions were shown below:

IRF3710 Dimensions.jpg

IRF3710 Dimensions

IRF3710 Manufacturer

On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analogue integrated circuits, as well as discrete semiconductor products.

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Frequently Asked Questions

What is irf3710 and how does it work?

It is a fully avalanche rated device with a gate-source voltage of around 20V. I suggest you read this entire post till the end as I’ll detail the complete Introduction to IRF3710 covering datasheet, pinout, features, and applications. Let’s jump right in. The IRF3710 is an N-channel MOSFET mainly employed for fast switching purposes.

What is irf3710 series RoHS semiconductor?

RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power products-Channel Power MOSFET (57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field-effect transistors. They are designed, tested and guaranteed to withstand the level of energy in a breakdown avalanche mode of operation.

Where is the gate pin located on an irf3710 MOSFET?

The gate pin is located between the source and the drain pin. The voltage on the gate pin is used to control the channel width. This IRF3710 MOSFET carries low ON resistance, making it a suitable pick for low drop switching applications. The low drop leads to low power loss, hence ensuring greater efficiency.

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