FDG6335N N-Channel MOSFET: Diagram, Pinout, and Datasheet [Video&FAQ]

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Published: 28 April 2022 | Last Updated: 28 April 2022

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FDG6335N

FDG6335N

ON Semiconductor

Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R

Purchase Guide

Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R

The FDG6335N is a PowerTrench® N-Channel MOSFET. This article mainly introduces Diagram, Pinout, Datasheet and other detailed information about ON Semiconductor FDG6335N.

This video will show you how to use N-Channel MOSFET's.

N-Channel MOSFET Tutorial

FDG6335N Description

The FDG6335N is a PowerTrench ® N-Channel MOSFET. This N-Channel MOSFET  was created with the goal of increasing the overall efficiency of  DC /DC converters using synchronous or traditional switching PWM controllers. Compact switching regulators were used to optimizing it, resulting in extremely low RDS(ON) and gate charge (QG) in a small package.


FDG6335N Pinout

The following is FDG6335N Pinout.

pinout.jpg

Pinout


FDG6335N CAD Model

The FDG6335N CAD Model is shown as follows.

symbol.png

Symbol

footprint.png

Footprint


FDG6335N Features

• 0.7 A, 20 V. RDS(ON) = 300 mΩ@ VGS = 4.5 V

RDS(ON) = 400 mΩ@ VGS = 2.5 V

• Low gate charge   (1.1 nC typical)

• High performance trench technology for extremely low RDS(ON)

• Compact industry standard SC70-6 surface mount package


Specifications

ON Semiconductor FDG6335N technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDG6335N.
  • Type
    Parameter
  • Lifecycle Status

    Lifecycle Status refers to the current stage of an electronic component in its product life cycle, indicating whether it is active, obsolete, or transitioning between these states. An active status means the component is in production and available for purchase. An obsolete status indicates that the component is no longer being manufactured or supported, and manufacturers typically provide a limited time frame for support. Understanding the lifecycle status is crucial for design engineers to ensure continuity and reliability in their projects.

    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Surface Mount
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Surface Mount
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    28mg
  • Transistor Element Material

    The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.

    SILICON
  • Number of Elements
    2
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    9 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Series

    In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.

    PowerTrench®
  • JESD-609 Code

    The "JESD-609 Code" in electronic components refers to a standardized marking code that indicates the lead-free solder composition and finish of electronic components for compliance with environmental regulations.

    e3
  • Pbfree Code

    The "Pbfree Code" parameter in electronic components refers to the code or marking used to indicate that the component is lead-free. Lead (Pb) is a toxic substance that has been widely used in electronic components for many years, but due to environmental concerns, there has been a shift towards lead-free alternatives. The Pbfree Code helps manufacturers and users easily identify components that do not contain lead, ensuring compliance with regulations and promoting environmentally friendly practices. It is important to pay attention to the Pbfree Code when selecting electronic components to ensure they meet the necessary requirements for lead-free applications.

    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code

    An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.

    EAR99
  • Resistance

    Resistance is a fundamental property of electronic components that measures their opposition to the flow of electric current. It is denoted by the symbol "R" and is measured in ohms (Ω). Resistance is caused by the collisions of electrons with atoms in a material, which generates heat and reduces the flow of current. Components with higher resistance will impede the flow of current more than those with lower resistance. Resistance plays a crucial role in determining the behavior and functionality of electronic circuits, such as limiting current flow, voltage division, and controlling power dissipation.

    300MOhm
  • Voltage - Rated DC

    Voltage - Rated DC is a parameter that specifies the maximum direct current (DC) voltage that an electronic component can safely handle without being damaged. This rating is crucial for ensuring the proper functioning and longevity of the component in a circuit. Exceeding the rated DC voltage can lead to overheating, breakdown, or even permanent damage to the component. It is important to carefully consider this parameter when designing or selecting components for a circuit to prevent any potential issues related to voltage overload.

    20V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    300mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    700mA
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    300mW
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    5 ns
  • FET Type

    "FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.

    2 N-Channel (Dual)
  • Transistor Application

    In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.

    SWITCHING
  • Rds On (Max) @ Id, Vgs

    Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.

    300m Ω @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id

    The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.

    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds

    The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.

    113pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs

    Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.

    1.4nC @ 4.5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    7ns
  • Fall Time (Typ)

    Fall Time (Typ) is a parameter used to describe the time it takes for a signal to transition from a high level to a low level in an electronic component, such as a transistor or an integrated circuit. It is typically measured in nanoseconds or microseconds and is an important characteristic that affects the performance of the component in digital circuits. A shorter fall time indicates faster switching speeds and can result in improved overall circuit performance, such as reduced power consumption and increased data transmission rates. Designers often consider the fall time specification when selecting components for their circuits to ensure proper functionality and efficiency.

    7 ns
  • Continuous Drain Current (ID)

    Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.

    700mA
  • Threshold Voltage

    The threshold voltage is a critical parameter in electronic components, particularly in field-effect transistors (FETs). It refers to the minimum voltage required at the input terminal of the FET to turn it on and allow current to flow between the source and drain terminals. Below the threshold voltage, the FET remains in the off state, acting as an open switch. Once the threshold voltage is exceeded, the FET enters the on state, conducting current between the source and drain.The threshold voltage is a key factor in determining the operating characteristics of FETs, such as their switching speed and power consumption. It is typically specified by the manufacturer and can vary depending on the specific type of FET and its design. Designers must consider the threshold voltage when selecting FETs for a particular application to ensure proper functionality and performance.

    1.1V
  • Gate to Source Voltage (Vgs)

    The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.

    12V
  • Drain Current-Max (Abs) (ID)

    The parameter "Drain Current-Max (Abs) (ID)" in electronic components refers to the maximum current that can flow from the drain to the source terminal of a field-effect transistor (FET) or a similar device. It is a crucial specification that indicates the maximum current handling capability of the component before it reaches its saturation point or gets damaged. This parameter is typically specified in amperes (A) and helps designers ensure that the component can safely handle the expected current levels in a circuit without exceeding its limits. It is important to consider this parameter when designing circuits to prevent overloading the component and ensure reliable operation.

    0.7A
  • Drain to Source Breakdown Voltage

    Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.

    20V
  • FET Technology

    Field-Effect Transistor (FET) technology is a type of semiconductor device commonly used in electronic components such as transistors and integrated circuits. FETs operate by controlling the flow of current through a semiconductor channel using an electric field. There are several types of FETs, including Metal-Oxide-Semiconductor FETs (MOSFETs) and Junction FETs (JFETs), each with its own characteristics and applications. FET technology offers advantages such as high input impedance, low power consumption, and fast switching speeds, making it suitable for a wide range of electronic devices and circuits. Overall, FET technology plays a crucial role in modern electronics by enabling efficient and reliable signal processing and amplification.

    METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj)

    Max Junction Temperature (Tj) refers to the maximum allowable temperature at the junction of a semiconductor device, such as a transistor or integrated circuit. It is a critical parameter that influences the performance, reliability, and lifespan of the component. Exceeding this temperature can lead to thermal runaway, breakdown, or permanent damage to the device. Proper thermal management is essential to ensure the junction temperature remains within safe operating limits during device operation.

    150°C
  • FET Feature

    FET Feature refers to the specific characteristics or attributes of a Field-Effect Transistor (FET) that distinguish it from other types of transistors. FETs are semiconductor devices commonly used in electronic circuits for amplification or switching purposes. Some common features of FETs include high input impedance, low output impedance, and voltage-controlled operation. These features make FETs suitable for various applications where precise control of current and voltage is required. Understanding the FET features is essential for selecting the right transistor for a particular circuit design and ensuring optimal performance.

    Logic Level Gate
  • Height
    1.1mm
  • Length
    2mm
  • Width
    1.25mm
  • REACH SVHC

    The parameter "REACH SVHC" in electronic components refers to the compliance with the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation regarding Substances of Very High Concern (SVHC). SVHCs are substances that may have serious effects on human health or the environment, and their use is regulated under REACH to ensure their safe handling and minimize their impact.Manufacturers of electronic components need to declare if their products contain any SVHCs above a certain threshold concentration and provide information on the safe use of these substances. This information allows customers to make informed decisions about the potential risks associated with using the components and take appropriate measures to mitigate any hazards.Ensuring compliance with REACH SVHC requirements is essential for electronics manufacturers to meet regulatory standards, protect human health and the environment, and maintain transparency in their supply chain. It also demonstrates a commitment to sustainability and responsible manufacturing practices in the electronics industry.

    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free

    Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.

    Lead Free
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FDG6335N Marking Diagram

The FDG6335N Marking Diagram is given below.

MARKING DIAGRAM.png

Marking Diagram


FDG6335N Alternatives

Part NumberDescriptionManufacturer
FDG6335NTRANSISTORSSmall Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PINFairchild Semiconductor Corporation
FDG6335ND87ZTRANSISTORSSmall Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PINFairchild Semiconductor Corporation


FDG6335N Applications

• DC/DC converter

• Power management

• Loadswitch


FDG6335N Package

The following figure is FDG6335N Package.

package.png

Package


FDG6335N Manufacturer

ON Semiconductor (Nasdaq: ON) is a leader in energy efficiency, enabling clients to cut worldwide energy consumption. To assist design engineers in solving their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power supply applications, the company offers a comprehensive portfolio of energy-efficient power and signal management, logic, discrete, and custom solutions. ON Semiconductor has a world-class supply chain and quality program, as well as a network of manufacturing sites, sales offices, and design centers in important markets across North America, Europe, and the Asia Pacific.


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Datasheet PDF

Download datasheets and manufacturer documentation for ON Semiconductor FDG6335N.
Frequently Asked Questions

What is a N-Channel MOSFET?

N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).

How N-channel is formed in MOSFET?

When we apply positive gate voltage the holes present under the oxide layer with a repulsive force and holes are pushed downward with the substrate. The depletion region is populated by the bound negative charges which are associated with the acceptor atoms. The electrons reach the channel is formed.

What is the FDG6335N?

PowerTrench ® N-Channel MOSFET.

What was the purpose of the PowerTrench ® N-Channel MOSFET?

Increasing the overall efficiency of DC /DC converters using synchronous or traditional switching PWM controllers.

What was used to optimize the FDG6335N?

Compact switching regulators.
FDG6335N

ON Semiconductor

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