IRF640 Power MOSFET: Datasheet, Pinout, and Circuits
N-Channel Tube 180m Ω @ 9A, 10V ±20V 1560pF @ 25V 72nC @ 10V TO-220-3
The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Mosfet amplifier using IRF640/9540
IRF640 Description
The IRF640 is an N Channel enhancement mode power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high-speed and low gate drive power. The IRF640 can be operated directly from integrated circuits. It can also be used as an amplifier such as audio amplifiers and audio amplifier stages.
IRF640 Pinout

IRF640 CAD Model
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Footprint

3D Model

IRF640 Features
Transistor Type: N Channel
Package Type: TO-220
Max Drain to Source Voltage: 200 V
Max Gate to Source Voltage: ±20 V
Max Continues Drain Current: 18 A
Max Pulsed Drain Current: 72 A
Max Power Dissipation: 125 W
Storage & Operating temperature: -65 to +150 Centigrade
IRF640 Advantages
Extremely high dv/dt capability
Very low intrinsic capacitances
Gate charge minimized
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Specifications
- TypeParameter
- Mount
In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.
Through Hole - Mounting Type
The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.
Through Hole - Package / Case
refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.
TO-220-3 - Number of Pins3
- Transistor Element Material
The "Transistor Element Material" parameter in electronic components refers to the material used to construct the transistor within the component. Transistors are semiconductor devices that amplify or switch electronic signals and are a fundamental building block in electronic circuits. The material used for the transistor element can significantly impact the performance and characteristics of the component. Common materials used for transistor elements include silicon, germanium, and gallium arsenide, each with its own unique properties and suitability for different applications. The choice of transistor element material is crucial in designing electronic components to meet specific performance requirements such as speed, power efficiency, and temperature tolerance.
SILICON - Number of Elements1
- Power Dissipation (Max)125W Tc
- Drive Voltage (Max Rds On, Min Rds On)10V
- Current - Continuous Drain (Id) @ 25℃18A Tc
- Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
150°C TJ - Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tube - Series
In electronic components, the "Series" refers to a group of products that share similar characteristics, designs, or functionalities, often produced by the same manufacturer. These components within a series typically have common specifications but may vary in terms of voltage, power, or packaging to meet different application needs. The series name helps identify and differentiate between various product lines within a manufacturer's catalog.
MESH OVERLAY™ - JESD-609 Code
The "JESD-609 Code" in electronic components refers to a standardized marking code that indicates the lead-free solder composition and finish of electronic components for compliance with environmental regulations.
e3 - Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Obsolete - Moisture Sensitivity Level (MSL)
Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures
1 (Unlimited) - Number of Terminations3
- ECCN Code
An ECCN (Export Control Classification Number) is an alphanumeric code used by the U.S. Bureau of Industry and Security to identify and categorize electronic components and other dual-use items that may require an export license based on their technical characteristics and potential for military use.
EAR99 - Terminal Finish
Terminal Finish refers to the surface treatment applied to the terminals or leads of electronic components to enhance their performance and longevity. It can improve solderability, corrosion resistance, and overall reliability of the connection in electronic assemblies. Common finishes include nickel, gold, and tin, each possessing distinct properties suitable for various applications. The choice of terminal finish can significantly impact the durability and effectiveness of electronic devices.
Matte Tin (Sn) - Voltage - Rated DC
Voltage - Rated DC is a parameter that specifies the maximum direct current (DC) voltage that an electronic component can safely handle without being damaged. This rating is crucial for ensuring the proper functioning and longevity of the component in a circuit. Exceeding the rated DC voltage can lead to overheating, breakdown, or even permanent damage to the component. It is important to carefully consider this parameter when designing or selecting components for a circuit to prevent any potential issues related to voltage overload.
200V - Peak Reflow Temperature (Cel)
Peak Reflow Temperature (Cel) is a parameter that specifies the maximum temperature at which an electronic component can be exposed during the reflow soldering process. Reflow soldering is a common method used to attach electronic components to a circuit board. The Peak Reflow Temperature is crucial because it ensures that the component is not damaged or degraded during the soldering process. Exceeding the specified Peak Reflow Temperature can lead to issues such as component failure, reduced performance, or even permanent damage to the component. It is important for manufacturers and assemblers to adhere to the recommended Peak Reflow Temperature to ensure the reliability and functionality of the electronic components.
NOT SPECIFIED - Reach Compliance Code
Reach Compliance Code refers to a designation indicating that electronic components meet the requirements set by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation in the European Union. It signifies that the manufacturer has assessed and managed the chemical substances within the components to ensure safety and environmental protection. This code is vital for compliance with regulations aimed at minimizing risks associated with hazardous substances in electronic products.
not_compliant - Current Rating
Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.
18A - Time@Peak Reflow Temperature-Max (s)
Time@Peak Reflow Temperature-Max (s) refers to the maximum duration that an electronic component can be exposed to the peak reflow temperature during the soldering process, which is crucial for ensuring reliable solder joint formation without damaging the component.
NOT SPECIFIED - Base Part Number
The "Base Part Number" (BPN) in electronic components serves a similar purpose to the "Base Product Number." It refers to the primary identifier for a component that captures the essential characteristics shared by a group of similar components. The BPN provides a fundamental way to reference a family or series of components without specifying all the variations and specific details.
IRF6 - Pin Count
a count of all of the component leads (or pins)
3 - Qualification Status
An indicator of formal certification of qualifications.
Not Qualified - Element Configuration
The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.
Single - Operating Mode
A phase of operation during the operation and maintenance stages of the life cycle of a facility.
ENHANCEMENT MODE - Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
125W - FET Type
"FET Type" refers to the type of Field-Effect Transistor (FET) being used in an electronic component. FETs are three-terminal semiconductor devices that can be classified into different types based on their construction and operation. The main types of FETs include Metal-Oxide-Semiconductor FETs (MOSFETs), Junction FETs (JFETs), and Insulated-Gate Bipolar Transistors (IGBTs).Each type of FET has its own unique characteristics and applications. MOSFETs are commonly used in digital circuits due to their high input impedance and low power consumption. JFETs are often used in low-noise amplifiers and switching circuits. IGBTs combine the high input impedance of MOSFETs with the high current-carrying capability of bipolar transistors, making them suitable for high-power applications like motor control and power inverters.When selecting an electronic component, understanding the FET type is crucial as it determines the device's performance and suitability for a specific application. It is important to consider factors such as voltage ratings, current handling capabilities, switching speeds, and power dissipation when choosing the right FET type for a particular circuit design.
N-Channel - Transistor Application
In the context of electronic components, the parameter "Transistor Application" refers to the specific purpose or function for which a transistor is designed and used. Transistors are semiconductor devices that can amplify or switch electronic signals and are commonly used in various electronic circuits. The application of a transistor can vary widely depending on its design and characteristics, such as whether it is intended for audio amplification, digital logic, power control, or radio frequency applications. Understanding the transistor application is important for selecting the right type of transistor for a particular circuit or system to ensure optimal performance and functionality.
SWITCHING - Rds On (Max) @ Id, Vgs
Rds On (Max) @ Id, Vgs refers to the maximum on-resistance of a MOSFET or similar transistor when it is fully turned on or in the saturation region. It is specified at a given drain current (Id) and gate-source voltage (Vgs). This parameter indicates how much resistance the component will offer when conducting, impacting power loss and efficiency in a circuit. Lower Rds On values are preferred for better performance in switching applications.
180m Ω @ 9A, 10V - Vgs(th) (Max) @ Id
The parameter "Vgs(th) (Max) @ Id" in electronic components refers to the maximum gate-source threshold voltage at a specified drain current (Id). This parameter is commonly found in field-effect transistors (FETs) and is used to define the minimum voltage required at the gate terminal to turn on the transistor and allow current to flow from the drain to the source. The maximum value indicates the upper limit of this threshold voltage under specified operating conditions. It is an important parameter for determining the proper biasing and operating conditions of the FET in a circuit to ensure proper functionality and performance.
4V @ 250μA - Input Capacitance (Ciss) (Max) @ Vds
The parameter "Input Capacitance (Ciss) (Max) @ Vds" in electronic components refers to the maximum input capacitance measured at a specific drain-source voltage (Vds). Input capacitance is a crucial parameter in field-effect transistors (FETs) and power MOSFETs, as it represents the total capacitance at the input terminal of the device. This capacitance affects the device's switching speed and overall performance, as it influences the time required for charging and discharging during operation. Manufacturers provide this parameter to help designers understand the device's input characteristics and make informed decisions when integrating it into a circuit.
1560pF @ 25V - Gate Charge (Qg) (Max) @ Vgs
Gate Charge (Qg) (Max) @ Vgs refers to the maximum amount of charge that must be supplied to the gate of a MOSFET or similar device to fully turn it on, measured at a specific gate-source voltage (Vgs). This parameter is crucial for understanding the switching characteristics of the device, as it influences the speed at which the gate can charge and discharge. A higher gate charge value often implies slower switching speeds, which can impact the efficiency of high-frequency applications. This parameter is typically specified in nanocoulombs (nC) in the component's datasheet.
72nC @ 10V - Rise Time
In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.
27ns - Vgs (Max)
Vgs (Max) refers to the maximum gate-source voltage that can be applied to a field-effect transistor (FET) without causing damage to the component. This parameter is crucial in determining the safe operating limits of the FET and helps prevent overvoltage conditions that could lead to device failure. Exceeding the specified Vgs (Max) rating can result in breakdown of the gate oxide layer, leading to permanent damage to the FET. Designers must ensure that the applied gate-source voltage does not exceed the maximum rating to ensure reliable and long-term operation of the electronic component.
±20V - Fall Time (Typ)
Fall Time (Typ) is a parameter used to describe the time it takes for a signal to transition from a high level to a low level in an electronic component, such as a transistor or an integrated circuit. It is typically measured in nanoseconds or microseconds and is an important characteristic that affects the performance of the component in digital circuits. A shorter fall time indicates faster switching speeds and can result in improved overall circuit performance, such as reduced power consumption and increased data transmission rates. Designers often consider the fall time specification when selecting components for their circuits to ensure proper functionality and efficiency.
25 ns - Continuous Drain Current (ID)
Continuous Drain Current (ID) is a key parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the maximum current that can flow continuously through the drain terminal of the FET without causing damage to the component. This parameter is crucial for determining the power handling capability of the FET and is specified by the manufacturer in the component's datasheet. Designers must ensure that the actual operating current does not exceed the specified Continuous Drain Current to prevent overheating and potential failure of the component.
18A - JEDEC-95 Code
JEDEC-95 Code is a standardized identification system used by the Joint Electron Device Engineering Council to categorize and describe semiconductor devices. This code provides a unique alphanumeric identifier for various memory components, ensuring consistency in documentation and communication across the electronics industry. The format includes information about the type, capacity, and technology of the device, facilitating easier specification and understanding for manufacturers and engineers.
TO-220AB - Gate to Source Voltage (Vgs)
The Gate to Source Voltage (Vgs) is a crucial parameter in electronic components, particularly in field-effect transistors (FETs) such as MOSFETs. It refers to the voltage difference between the gate and source terminals of the FET. This voltage determines the conductivity of the FET and controls the flow of current through the device. By varying the Vgs, the FET can be switched on or off, allowing for precise control of electronic circuits. Understanding and properly managing the Vgs is essential for ensuring the reliable and efficient operation of FET-based circuits.
20V - Drain to Source Breakdown Voltage
Drain to Source Breakdown Voltage, often denoted as V(BR) D-S, is a critical parameter in electronic components, particularly in field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It represents the maximum voltage that can be applied between the drain and source terminals of the device without causing breakdown or permanent damage. Exceeding this voltage can lead to excessive current flow, resulting in thermal failure or destruction of the component. It is essential for ensuring reliable operation in circuit designs where high voltages may be encountered.
200V - Pulsed Drain Current-Max (IDM)
The parameter "Pulsed Drain Current-Max (IDM)" in electronic components refers to the maximum current that the device can handle when operated under pulsed conditions. This specification is important for understanding the device's capability to handle short bursts of high current without causing damage. It is typically measured in amperes and is specified for a specific pulse width and duty cycle. Designers use this parameter to ensure that the component can withstand transient current spikes without failing, making it crucial for applications where pulsed operation is common, such as in power electronics and RF circuits.
72A - Avalanche Energy Rating (Eas)
Avalanche Energy Rating (Eas) is a parameter that quantifies the energy handling capability of a semiconductor device, particularly during avalanche breakdown conditions. It indicates the maximum energy that the device can withstand without being damaged when it experiences an avalanche effect. This rating is crucial for applications where devices might be exposed to over-voltage or other conditions that could cause unintended breakdown, ensuring reliability and longevity in operation. The Eas value helps designers select appropriate components for circuits that may encounter transient events.
280 mJ - RoHS Status
RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.
ROHS3 Compliant - Lead Free
Lead Free is a term used to describe electronic components that do not contain lead as part of their composition. Lead is a toxic material that can have harmful effects on human health and the environment, so the electronics industry has been moving towards lead-free components to reduce these risks. Lead-free components are typically made using alternative materials such as silver, copper, and tin. Manufacturers must comply with regulations such as the Restriction of Hazardous Substances (RoHS) directive to ensure that their products are lead-free and environmentally friendly.
Contains Lead
IRF640 Test Circuits
IRF640 Alternatives

IRF640 Equivalents
YTA640, IRF641, IRF642, IRFB4620, IRFB5620, 2SK740, STP19NB20, YTA640, BUK455-200A, BUK456-200A, BUK456-200B, BUZ30A, MTP20N20E, RFP15N15, 2SK891, 18N25, 18N40, 22N20
Please check the pin configuration and parameters before replacing them in your circuit.
Where to use IRF640
The IRF640 can be used in general-purpose switching and amplification applications. It can be used in circuits where high-speed switching is required, for example, battery backup systems, uninterruptable power supplies, etc. The IRF640 can be operated directly from integrated circuits and can also be used as an amplifier such as audio amplifiers and audio amplifier stages.
IRF640 Applications
Uninterruptible power supply (UPS)
DC to DC converters
Motor control circuits
Battery chargers and BMS
Solar power supply applications
TV and computer monitor power supplies
Fast switching applications
IRF640 Package

IRF640 Package Outline

IRF640 Mechanical Data
IRF640 Manufacturer
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology, and its products play a key role in enabling today's convergence trends.
Trend Analysis
Datasheet PDF
- Datasheets :
1.What is IRF640?
The IRF640 is an N Channel MOSFET designed for high-speed switching purposes. This high-speed switching capability can be very useful in applications where switching speed is crucial, for example in a UPS circuit or in any other application where the user wants to change the load input power from one source to another.
2.How to safely long run IRF640 in a circuit?
For long-term performance, we always suggest using all components at least 20% below their maximum ratings and the same goes with IRF640. The max drain current is 18A therefore do not drive a load of more than 14.4A. The maximum load voltage is 200V and to stay under the safe side do not drive a load of more than 160V. The maximum pulsed drain current is 72A so the max pulsed load should not exceed 57.6A. Use a proper heat sink with the transistor and always store or operate the device at temperatures above -55 degrees centigrade and below +150 degrees centigrade.
3.How does AP Channel connect to MOSFET?
To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).
4.Can MOSFET switch AC?
A MOSFET can only be used to control DC loads since it is a unidirectional switch - current flow can be controlled when it is flowing from drain to source, but can not be controlled from source to drain. So, certainly, it can not be used to control AC loads.
5.Can a MOSFET conduct in both directions?
MOSFETs will conduct equally in both directions when they are turned "on." An interesting consequence of the body-source connection is that, even if you turn the transistor "off," it will still conduct in the reverse direction.
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