IRF1407 Power MOSFET: Pinout, Datasheet and Test Circuit
IRF1407 is specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. There is a huge range of Semiconductors, Capacitors, Resistors and ICs in stock. Welcome RFQ.

How to Measure Mosfet 4 Different Types LM317T, IRF1407, P75NF750 | N Channel
IRF1407 Pinout

IRF1407 Pinout
| Pin Number | Pin Name | Description |
| 3 | SOURCE | Normally connected to GROUND |
| 2 | DRAIN | Normally connected to LOAD |
| 1 | GATE | Normally used as TRIGGER to turn ON the MOSFET. |
IRF1407 CAD Model
Symbol

IRF1407 Symbol
Footprint

IRF1407 Footprint
3D Model

IRF1407 3D Model
What is IRF1407
IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRF1407 Manufacturer
Infineon is a dynamic and flexible company. Success in the highly competitive and ever-changing microelectronics world is our constant goal. As the world's leading designer, manufacturer and supplier, Infineon has a wide range of products used in various microelectronics applications. Our product portfolio includes not only logic products, including digital, mixed-signal and analogue integrated circuits but also discrete semiconductor products.
Specifications
- TypeParameter
Parts with Similar Specs
IRF1407 Features
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic DV/DT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to up to Tjmax
IRF1407 Application
Industrial Motor Drive
IRF1407 Equivalent
The equivalent for IRF1407:
IRF1010E
How to Test IRF1407
The test circuit and waveform for IRF1407 is shown below.

Switching Time Test Circuit

Switching Time Waveforms

Unclamped Inductive Test Circuit

Unclamped Inductive Waveforms

Basic Gate Charge Waveform

Gate Charge Test Circuit

Peak Diode Recovery dv /dt Test Circuit

For N-channel HEXFET® power MOSFETs.
For detailed information, you can find it in the datasheet at the end of the article.
How to package IRF1407
It is available in a TO-220AB package.

IRF1407 Package
What is the power dissipation (Pd) of irf1407?
Power Dissipation (Pd): 330W.
What is Hexfet power MOSFET?
The HEXFET®is fundamentally different: it is a voltage-controlled power MOSFET device. A voltage must be applied between the gate and source terminals to produce a flow of current in the drain (see Figure 1b). The gate is isolated electrically from the source by a layer of silicon dioxide.
What does a power MOSFET do?
Power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain.
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