TTA1943 VS. 2SA1943 How to Differentiate?

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Published: 27 June 2022 | Last Updated: 27 June 2022

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TTA1943(Q)

TTA1943(Q)

Toshiba Semiconductor and Storage

Trans GP BJT PNP 230V 15A 3-Pin(3 Tab) TO-3PL

Unit Price: $1.375814

Ext Price: $1.38

Purchase Guide

Trans GP BJT PNP 230V 15A 3-Pin(3 Tab) TO-3PL

TTA1943 PNP power Transistor is the newer and better version of the famous 2SA1943 power transistor. This post will unlock the difference between TTA1943 and 2SA1943 from many angles such as pinout, applications, features, datasheet and more details.

TTA1943 VS. 2SA1943 Pinout

TTA1943 VS. 2SA1943 Pinout.jpg

TTA1943 VS. 2SA1943 Pinout

The pinout of both transistors is similar; starting from left: Base, Collector, and Emitter. 

Overview

The TTA1943 PNP power transistor is a newer and improved variant of the well-known 2SA1943 power transistor. This means that it has replaced a considerably more expensive power transistor found in electrical products such as televisions and audio amplifiers in terms of quality.

TTA1943 is a PNP power transistor that is commonly found in audio frequency amplifiers and high-power audio systems. It was created by TOSHIBA in JAPAN and quickly became a popular power transistor. The TTS2500 NPN power transistor is its counterpart transistor.

TTA1943 VS. 2SA1943 Main Difference

Parts

TTA1943

2SA1943

Cost

Cheaper

More expensive

Packaging

TO-3P

TO-264

Manufacturer

Toshiba(Japan)

Anyone from Japan & China

DC Current Gain(Min.)

80

55

Collector O/P Capacitance

240 pF

360 pF

TTA1943 and 2SA1943 differ primarily in DC current gain and collector output capacitance. TTA1943 and 2SA1943 have minimal hFEs of 80 and 55, respectively. TTA1943 and 2SA1943 have COBs of 240 pF and 360 pF, respectively.

TTA1943 VS. 2SA1943 Applications

TTA1943 Applications

  • Switch-mode power supplies (SMPS)

  • Relays

  • Used with its complementary transistor in a push-pull configuration

  • Power supply

  • Switching a load of high current rating

  • Power amplifiers

  • Inverters

  • Converters

  • Power control circuits

  • DC to AC converters

2SA1943 Applications

  • High-Fidelity Audio Output Amplifier

  • General Purpose Power Amplifier



TTA1943 VS. 2SA1943 Package

TTA1943 Package.jpg

TTA1943 Package

2SA1943 Package.jpg

2SA1943 Package


It comes only in TO-3P packages whereas 2SA1943 comes in TO-3P and TO-264 packages.

Specifications

Toshiba Semiconductor and Storage TTA1943(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TTA1943(Q).
  • Type
    Parameter
  • Factory Lead Time
    16 Weeks
  • Mount

    In electronic components, the term "Mount" typically refers to the method or process of physically attaching or fixing a component onto a circuit board or other electronic device. This can involve soldering, adhesive bonding, or other techniques to secure the component in place. The mounting process is crucial for ensuring proper electrical connections and mechanical stability within the electronic system. Different components may have specific mounting requirements based on their size, shape, and function, and manufacturers provide guidelines for proper mounting procedures to ensure optimal performance and reliability of the electronic device.

    Through Hole
  • Mounting Type

    The "Mounting Type" in electronic components refers to the method used to attach or connect a component to a circuit board or other substrate, such as through-hole, surface-mount, or panel mount.

    Through Hole
  • Package / Case

    refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

    TO-3PL
  • Number of Pins
    3
  • Collector-Emitter Breakdown Voltage
    230V
  • Collector-Emitter Saturation Voltage
    -3V
  • Number of Elements
    1
  • hFEMin
    80
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)

    Moisture Sensitivity Level (MSL) is a standardized rating that indicates the susceptibility of electronic components, particularly semiconductors, to moisture-induced damage during storage and the soldering process, defining the allowable exposure time to ambient conditions before they require special handling or baking to prevent failures

    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150W
  • Frequency

    In electronic components, the parameter "Frequency" refers to the rate at which a signal oscillates or cycles within a given period of time. It is typically measured in Hertz (Hz) and represents how many times a signal completes a full cycle in one second. Frequency is a crucial aspect in electronic components as it determines the behavior and performance of various devices such as oscillators, filters, and communication systems. Understanding the frequency characteristics of components is essential for designing and analyzing electronic circuits to ensure proper functionality and compatibility with other components in a system.

    30MHz
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    150W
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    30MHz
  • Transistor Type

    Transistor type refers to the classification of transistors based on their operation and construction. The two primary types are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs use current to control the flow of current, while FETs utilize voltage to control current flow. Each type has its own subtypes, such as NPN and PNP for BJTs, and MOSFETs and JFETs for FETs, impacting their applications and characteristics in electronic circuits.

    PNP
  • Collector Emitter Voltage (VCEO)

    Collector-Emitter Voltage (VCEO) is a key parameter in electronic components, particularly in transistors. It refers to the maximum voltage that can be applied between the collector and emitter terminals of a transistor while the base terminal is open or not conducting. Exceeding this voltage limit can lead to breakdown and potential damage to the transistor. VCEO is crucial for ensuring the safe and reliable operation of the transistor within its specified limits. Designers must carefully consider VCEO when selecting transistors for a circuit to prevent overvoltage conditions that could compromise the performance and longevity of the component.

    230V
  • Max Collector Current

    Max Collector Current is a parameter used to specify the maximum amount of current that can safely flow through the collector terminal of a transistor or other electronic component without causing damage. It is typically expressed in units of amperes (A) and is an important consideration when designing circuits to ensure that the component operates within its safe operating limits. Exceeding the specified max collector current can lead to overheating, degradation of performance, or even permanent damage to the component. Designers must carefully consider this parameter when selecting components and designing circuits to ensure reliable and safe operation.

    15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce

    The parameter "DC Current Gain (hFE) (Min) @ Ic, Vce" in electronic components refers to the minimum value of the DC current gain, denoted as hFE, under specific operating conditions of collector current (Ic) and collector-emitter voltage (Vce). The DC current gain hFE represents the ratio of the collector current to the base current in a bipolar junction transistor (BJT), indicating the amplification capability of the transistor. The minimum hFE value at a given Ic and Vce helps determine the transistor's performance and efficiency in amplifying signals within a circuit. Designers use this parameter to ensure proper transistor selection and performance in various electronic applications.

    80 @ 1A 5V
  • Current - Collector Cutoff (Max)

    The parameter "Current - Collector Cutoff (Max)" refers to the maximum current at which a transistor or other electronic component will cease to conduct current between the collector and emitter terminals. This parameter is important in determining the maximum current that can flow through the component when it is in the cutoff state. Exceeding this maximum cutoff current can lead to malfunction or damage of the component. It is typically specified in the component's datasheet and is crucial for proper circuit design and operation.

    5μA ICBO
  • Vce Saturation (Max) @ Ib, Ic

    The parameter "Vce Saturation (Max) @ Ib, Ic" in electronic components refers to the maximum voltage drop across the collector-emitter junction when the transistor is in saturation mode. This parameter is specified at a certain base current (Ib) and collector current (Ic) levels. It indicates the minimum voltage required to keep the transistor fully conducting in saturation mode, ensuring that the transistor operates efficiently and does not enter the cutoff region. Designers use this parameter to ensure proper transistor operation and to prevent overheating or damage to the component.

    3V @ 800mA, 8A
  • Collector Base Voltage (VCBO)

    Collector Base Voltage (VCBO) is the maximum allowable voltage that can be applied between the collector and base terminals of a bipolar junction transistor when the emitter is open. It is a critical parameter that determines the voltage rating of the transistor and helps prevent breakdown in the collector-base junction. Exceeding this voltage can lead to permanent damage or failure of the component.

    230V
  • Emitter Base Voltage (VEBO)

    Emitter Base Voltage (VEBO) is a parameter used in electronic components, particularly in transistors. It refers to the maximum voltage that can be applied between the emitter and base terminals of a transistor without causing damage to the device. Exceeding this voltage limit can lead to breakdown of the transistor and potential failure. VEBO is an important specification to consider when designing circuits to ensure the proper operation and reliability of the components. It is typically provided in the datasheet of the transistor and should be carefully observed to prevent any potential damage during operation.

    -5V
  • Height
    26mm
  • Length
    20.5mm
  • Width
    5.2mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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Parts with Similar Specs

The three parts on the right have similar specifications to Toshiba Semiconductor and Storage & TTA1943(Q).

TTA1943 VS. 2SA1943 Datasheet

TTA1943 VS. 2SA1943 Conclusion

The newer and superior 2SA1943 power transistor is the TOSHIBA TTA1943. The TT device is more affordable than its predecessor and has better specifications. It also comes in a TO-3P package. When selecting whether or not to buy, it's unquestionably the finest option out of the two! The new TT transistors are exceptionally durable and, according to laboratory tests, can tolerate extremely high temperatures.

TTA1943(Q)

Toshiba Semiconductor and Storage

In Stock: 18400

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.375814

    $1.38

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    $12.98

  • 100

    $1.224469

    $122.45

  • 500

    $1.155160

    $577.58

  • 1000

    $1.089773

    $1,089.77

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